Standards and reference samples for nano- & micro-measurement systems
This tabulated synopsis contains currently available
artefacts which may be used as standards and which are suitable for the
calibration of stylus or optical instruments and SPMs. Standards are listed in
an arbitrary order within the sections without any ranking or preference. This
list does not imply recommendation or endorsement by Physikalisch-Technische
Bundesanstalt, nor does it imply that the listed standards are necessarily the
best and/or only available for the purpose. No claim is put forward to the
completeness and correctness of the list of manufacturers and products. If you
know of further standards that might be included or if you have discovered
outdated resp. incorrect data, PTB welcomes your feedback and appreciates any
help to improve this list. This list may give a first overview, but it cannot
replace consultation with the manufacturer resp. distributor. Please note that
PTB itself does not sell standards and does neither benefit from the sale of
standards nor from including them in this list. For certified calibration,
please contact PTB or any other National Metrology Institute (NMI).
Last update: 2007-02-08
I) Roughness |
M) Diameter, Roundness |
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J) Critical Dimension
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N) Probing Force |
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K) Tip Radius, Angle, Parallelity |
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Nr. No. |
Manufacturer
Hersteller
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Modell
Model
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Measurement
range Messbereich |
Description
Beschreibung
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I M A G E |
lateraler Messbereich |
Substrat Substrate
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Coating
Beschichtung
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Remarks Bemerkungen |
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(nm) |
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(mm) |
Material Material |
Dimension Dimension. (mm) |
Material Material |
Thickness Dicke(nm) |
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A) Single Step |
A) Einzelstufen |
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A01. |
SiMetricS |
Depth Setting Standards VS |
50 nm, ..., 1000 µm |
grooves with rectangular profile
and grooves with 54° slope, 100 µm wide, 6 mm length |
I
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³ 50 x 50 |
Silicon |
50 x 50 |
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suitable for microscopes |
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A02. |
Pelco |
AFM Gold Calibration Kit |
5, 15, 30 |
Colloidal Gold spheres dispersed
on Mica |
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Mica |
Æ 9,9 |
Colloidal Gold |
5 ... 30 |
suitable also for tip test;
mounted on; Æ15 mm AFM disc |
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A03. |
SLOAN/DEKTAK now
Veeco |
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20, 50, 100, 200, 500, 1000, 5000,
10000 |
single bar with rectangular
profile, 100 µm wide, 750 µm length |
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Quartz |
25 x 25 x 9 |
Cr |
90 |
various test and diagnostic features
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A04. |
VLSI |
SHS – 80, -180, |
8, 18, 44, 88, 180, 450, 940 |
single bar with rectangular
profile, 100 µm wide, 750 µm length |
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Quartz |
25 x 25 x 3 |
Cr |
90 |
various test and diagnostic features
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A05. |
VLSI |
SHS – 1.8, -8.0, |
1800, 8000, 24000, 50000 |
trench 1 mm wide, 2.5 mm length |
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Quartz |
25 x 25 x 3 |
Cr |
90 |
Coating optional, suitable for
stylus instruments bb) |
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A06. |
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200, ..., 9000 |
trenches of different width for
each depth |
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Quartz |
40 x 20 x 10 |
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suitable for stylus instruments |
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A07. |
MTT |
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30, ..., 3000 |
3 trenches with rectangular
profile, 100 µm wide, 6 mm length |
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Silicon |
Æ 37, 3 dick |
Cr |
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suitable for stylus instruments |
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A08. |
PTB |
Cu Depth Setting Standards |
1, 5, 20, 50, 200, 450, 600, 900,
1000, 2000, 5000 µm |
grooves with 55° slope, distance
between grooves: 400 µm, flat bottom (width 300 µm) |
³ 1200... 8100 |
Copper |
45 x 23, thickness: 10/12 |
Nickel |
20 |
Type 900: 1...900 µm, Type 5000: 5 ...5000 µm |
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B) z-Axis: Periodic Steps |
B) z-Achse: periodische Stufen |
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B01. |
MikroMasch |
TGZ, -01,-02,-03,-04, -11; TGF11 |
20, 100, 500, 1000, 1500 |
TGZ: rectangular profile, pitch 3 µm; TGZ11: pitch 10 µm |
£ 3000 x 3000 |
Silicon |
5 x 5 x 0,45 |
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B02. |
MikroMasch |
TGF11 |
1750 |
TGF: trapezoidal, pitch 10 µm |
£ 3000 x 3000 |
Silicon |
5 x 5 x 0,45 |
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B03. |
NTT-AT |
Si(111) Atomic Steps |
0,13, 0,31 nm |
10 steps per 1 µm or 10 µm |
£ 6000 x 6000 |
Silicon |
10 x 10
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humidity is kept as low as
possible, perhaps use of desiccator for storage |
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z-Axis: Step Grating
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C) z-Achse: Stufen
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C01. |
MikroMasch |
UMG01, 02 |
20, 31 |
chess board pattern, pitch 2 µm |
£ 400 x 400 |
Si |
5 x 5 |
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C02. |
VLSI |
STS 2 –180P, -440P, |
18, 44, 100, 180 |
waffle-like; pitch:1,8/ 3/ 5 mm |
£ 270 x 270 |
SI |
12 x 8 x 0,675 |
Pt |
40 |
3 areas per die, |
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C03. |
VLSI |
STS 3 –180, -440, |
18, 44, 100, 180 |
waffle-like; pitch: |
£ 270 x 270 |
Si |
12 x 8 x 0,5 |
Pt |
40 |
3 areas per die, |
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C04. |
VLSI |
STR 3 –180, -440, |
18, 44, 100, 180 |
waffle-like; pitch: 3 mm |
£ 1200 x |
Si |
8 x 8 |
Pt |
40 |
also used as pitch standard /
reference, |
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C05. |
VLSI |
STR 10 -180, -440, |
18, 44, 100, 180 |
waffle-like; pitch: 10 mm |
£ 4 000 x |
Si |
8 x 8 |
Pt |
40 |
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C06. |
EU-Standard |
partly available from
Nanosensors |
8, 24, 80, 240, 800, 2 400 |
grating and waffle-like; 8 - 240: pitch 4µm, 8µm, 80µm; 800 & 2400: pitch 16 µm, 40 µm |
£ 200 x 200 £ (1000 x 1000) |
Si |
5 x 7 |
Pt/Ir |
70 |
mounted on disc Æ12 mm |
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D) x-, y-Axis: 1-Dimensional |
D) x-, y-Achse: 1-Dimensional |
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D01. |
SiMetricS |
Lateral Standard LS |
10...2500 |
line grating, depth: 517 µm |
250 ...62500 |
Si |
75 x 20 |
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ISO 5436-1 Type C3 |
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D02. |
ASM |
750-HD |
750 |
Ni replica of a CD surface
structure; pits arranged in lines, pitch 750 nm; height 100 nm |
£ 6350 |
Ni |
Æ 6,35, 0,3 mm thick |
- |
- |
"High durability" |
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D03. |
MikroMasch |
TGG 01 |
3 000 |
„ridge“ line grating with < 10 nm edge radius;
height: 1,8 mm |
£ 3 000 x |
Si |
5 x 5 x 0,45 |
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also used as tip characteriser |
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Moxtek |
MXS – 301, -701,-CE |
300, 700 |
line grating; height: 100 nm |
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Si |
3 x 4 x0,5 |
W |
60 nm |
holographic pattern |
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E) x-, y-Axis: 2-Dimensional |
E) x-, y-Achse: 2-Dimensional |
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E01.
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Photomaske
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20 mm |
Cr on quartz substrate |
120 mm x 120 mm |
Quartz |
175 x 175 |
no |
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Test of the positioning properties |
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E02. |
VLSI |
STS 2 –180, -440, |
1 800 + 3 000 + 5 000 |
waffle-like; step heights: 18, 44,
100, 180 nm |
£ 270 x 270 |
SI |
12 x 8 x 0,675 |
Pt |
40 |
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E03. |
VLSI |
STR 3 –180, -440, |
3 000 |
waffle-like; step heights: 18, 44,
100, 180 nm |
£ 1200 x |
Si |
8 x 8 |
Pt |
40 |
also used as step height standard
/ reference |
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E04. |
VLSI |
STR 3 –180, -440, |
10 000 |
waffle-like; step heights: 18, 44,
100, 180 nm |
£ 4000 x |
Si |
8 x 8 |
Pt |
40 |
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E05. |
EU-Standard |
partly available from
Nanosensors |
100, 300, |
array of neg. pyramides; depth:
35nm, 100 nm |
£ 200 x 200 |
Si |
5 x 7 |
- |
- |
etch-pits; shape defined by crystalline
properties |
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E06. |
EU-Standard |
Partly available from
Nanosensors / Ibsen |
1 000, 3 000, 10 000 |
flat-topped pyramide-like posts; |
£ 2 000 x |
Si |
5 x 7 |
Pt |
100 |
holographic pattern |
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E07. |
Nanosearch
Membrane |
NanoCal |
10 ... 15 |
S-layer on Si or glass |
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Silicon or glass |
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self-assembled layer |
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E08. |
MikroMasch |
TGX01 |
3 000 |
chess-board, „flared“ pillars with
< 5 nm edge radius; height: 900 nm |
£ 2 000 x |
Si |
5 x 5 x 0,45 |
- |
- |
standard also used for 2-dim. tip
characterisation |
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E09. |
Moxtek |
MXS – 302 CE |
300 |
cylindrical posts; height: 100nm |
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Si |
3 x 4 x 0,5 |
W |
60 |
commercial calibration software |
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E10. |
Moxtek |
MXS – 702 CE |
700 |
diamond-shaped posts; height: 100 nm |
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Si |
3 x 4 x 0,5 |
W |
60 |
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E11. |
NanoSensors |
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200 |
array of neg. pyramides; depth: 70 nm |
£ 500 x 500 |
Si |
7 x 7 |
- |
- |
etch-pits; shape defined by crystalline
properties |
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E12. |
Pelco |
607 – AFM 607 – STM |
463 (2160 lines/mm) |
Waffle grating replica |
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Au plated |
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AFM: uncoated, mounted on disc 12
mm STM: coated, but unmounted |
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E13. |
SIS |
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1 500 |
waffle-like pattern; height: 100 nm |
£ 100 x 100 |
Glass/Cr |
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- |
- |
4 identical areas; Hex numbers in
centre |
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Supracon |
Nanoscale Linewidth/Pitch - Standard |
Pitch: 160, 200, 230, 260, 300,
500, 700, 1000, 4000 nm CD: 80 nm to 2µm |
x-gratings, y-gratings,
Linewidthstructur, x- y- gratings and circular gratings |
10 x 10 µm |
Quarz |
8 x 8 mm² |
a-Si |
25 |
Designed for using in DUVM, CLSM
(also usable in AFM and SEM) |
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G)
Flatness
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G)
Ebenheit
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G01. |
SiMetricS |
Flatness Standard Type FtS |
PV < 110/65 |
Flat ref. area |
£ 10 mm x 10 mm/ £ 5 x 5 |
Si |
15 x 15 x 6 |
SiO2 |
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G02. |
EU-Standard |
partly available from
Nanosensors |
PV < 10 |
Flat ref. area |
£ 250 x 250 |
Quartz |
5 x 7 x 2 |
Cr |
100 |
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H)
Thickness
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H)
Schichtdicke
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H01. |
Inst. Mikro elektroden |
SiO2 on Si |
7, 20, 70, 300, 800 |
3 lines with different width 5,
30, and 100 µm |
£ 4000 |
SiO2/Si |
5 x 7 |
Cr |
100 |
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I)
Roughness
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I)
Rauheit
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I01. |
VLSI |
RAS-90, 220, 440, 900, 2250, 4700 |
9, 22, 44, 90, 225, 470 |
4 separate fields with 6, 20, 60,
and 200 µm pitch rectangular profile |
£ ~5000 x 4500 |
Silicon die on Quartz |
25 x 25 x 6 |
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Roughness standard for Ra |
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J)
Critical Dimension
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J)
Kritische Dimension |
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J01. |
Pelco |
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1, 2, 5, 10µm |
central area comprises four line
patterns |
£ 180 |
Silicon |
4.8 x 4.5 |
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for SEM |
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Supracon |
Nanoscale CD - Standard |
CD: 50, 100, 150, 200, 300 und 800 nm |
6 grups of 5 CD-Si-bars, space between bars 1µm,
depth: 250 nm |
10 x10 |
Si |
8 x 8 mm² |
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Designed for using in AFM (also
usable in SEM) |
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K)
Tip
Radius,
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K)
Spitzenradius,
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K01. |
SiMetricS |
Type 1 |
4
gratings with the periods: |
Triangular profile: GrT70 |
£ |
Si |
10 x 10 |
SiO2 |
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K02. |
SiMetricS |
Type 2 |
1
grating with the period: |
Trapezoidal
profile: GrTz55 |
£ |
Si |
10 x 10 |
SiO2 |
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K03. |
SiMetricS |
Type 3 |
1
grating with the period: |
Rectangular
profile: GrRw |
£ |
Si |
10 x 10 |
SiO2 |
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SiMetricS |
Type 4 |
8 gratings with the periods: |
Rectangular profile: GrRd |
£ |
Si |
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SiO2 |
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L) Contour, Profile |
L) Kontur, Profil |
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L01. |
PTB |
Micro contour artefact |
100 µm, 250 µm, 500 µm, 1000 µm, 2000 µm |
profile of cylindrical
(180°), and prismatic elements (45°,
60°, 80°) |
0.5 x 0.5 to 18 x 3 |
Steel |
50 x 3 x 15 |
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Test and comparison of optical and
tactile micro sensors |
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M)
Diameter,
Poundness
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M)
Durchmesser,
Zylindrizität |
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PTB |
Micro hole artefact |
Ø 100 µm x 2.4 mm |
cylinder |
150 |
Steel |
10 x 10 |
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Test of tactile micro sensors |
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N)
Probing
Force
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N)
Antastkraft |
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N01. |
SiMetricS |
Probing force standard Type FC |
0.005 – 1.0 mN/µm |
cantilever for probing with stylus
intruments, indenters etc. |
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Si |
15 x 15 |
SiO2 |
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N02. |
SiMetricS |
Probing force standard Type FB |
0.3 – 5.5 mN/µm |
cantilever fixed at both sides for
probing with stylus intruments, indenters etc. |
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Si |
15 x 15 |
SiO2 |
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aa ) available on 200 mm Si wafer
bb ) available on 200 and 300 mm
wafer
cc ) optional mounted on 25 x 25
x 0,6 mm 3 Quartz bloc or 100 - 200 mm Silicon wafer
dd ) standard is accompanied by
a STR10 of same height
ee ) standard is accompanied by a
STR2 of same height
This tabulated synopsis contains currently available artefacts which may
be used as standards and which are suitable for the calibration of stylus or
optical instruments and SPMs. Standards are listed in an arbitrary order within
the sections without any ranking or preference. This list does not imply
recommendation or endorsement by PTB, nor does it imply that the listed
standards are necessarily the best and/or only available for the purpose. No
claim is put forward to the completeness and correctness of the list of manufacturers
and products
A01. SiMetricS GmbH, Siliziumkomponenten für die Messtechnik, Am
Südhang 5, 09212 Limbach-Oberfrohna and J. Fruehauf, S. Kroenert, U. Brand, R.
Krueger-Sehm: Attainable precision of silicon dimensional standards. Proc.
Euspen Conf. (2004),
joachim.fruehauf@e-technik.tu-chemnitz.de and < www.SiMetricS.de >
A02. PELCO
INTERNATIONAL, P.O. Box 492477, Redding, CA 96049-2477, USA;< www.pelcoint.com/index >
A03. Veeco GmbH, D-85716
Unterschleißheim,
A04. VLSI Standards Inc.; 3087
North First Street; San Jose, CA 95134-2006, USA; < www.vlsistd.com >
A06. Halle Präzisions-Kalibriernormale GmbH, Im
Bühfeld 12, D-31234 Edemissen, Germany; Fax: +49 5373 7669
A07. Meracia Technika- Technocentrum, P.O. Box
249, SK 84000 Bratislava, Slovakia; Fax: +42 17 6542 6143
A08. PTB Cu Depth Setting Standards, PTB, AG 5.11, Bundesallee 100,
38116 Braunschweig;
< www.ptb.de/de/org/5/51/511/index.htm > and U. Brand, G.
Hinzmann, H. Schnädelbach, C. Feist, P. Stuht, R. Krüger-Sehm, V. Jäger:
Rückführbare Präzisions-Tiefen-Einstellnormale für Messbereiche von 1 µm bis 1
mm (Traceable precision depth setting standards for measurement ranges from 1
µm to 1 mm). Technisches Messen 66, 12 (1999), 496-503. uwe.brand@ptb.de
B01. MikroMasch, Narva mnt. 13, 10151 Tallina,
Estonia; < www.mikromasch.com >
B03. NTT Advanced Techn. Corp., 3-1
Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198,
C06. EU project "Transfer Standards for Calibration of SPMs”
Information may be obtained from the coordinator Dr. Jørgen Garnæs, DFM,
D01. SiMetricS GmbH, Siliziumkomponenten für die
Messtechnik, Am Südhang 5, 09212 Limbach-Oberfrohna
joachim.fruehauf@e-technik.tu-chemnitz.de and < www.SiMetricS.de >
D02. Advanced Surface Microscopy,
Inc.
D04. Moxtek Inc. Orem, UT 84057, USA; < www.moxtek.com >
E01. ML&C GmbH, Im Steinfeld 5, D-07751 Jena info@mlc-jena.de < www.mlc-jena.de >
E05. EU project "Transfer Standards for Calibration of SPMs”
Information may be obtained from the coordinator Dr. Jørgen Garnæs, DFM,
E06. EU project "Transfer Standards for Calibration of SPMs” Information
may be obtained from the coordinator Dr. Jørgen Garnæs, DFM,
E07. Nanosearch Membrane GmbH, TSP
Nanoengineering, A-1160 Vienna, Austria; < www.nanosearch.at >
E11. NANOSENSORS, IMO-Building, Im Amtmann 6, D-35578 Wetzlar-Blankenfeld, Germany; <www.nanosensors.com >
E13. SIS Surface Imaging Systems
GmbH; Kaiserstr. 100,
D-52134 Herzogenrath, Germany; < www.sis-gmbh.com
>
E14. Supracon AG, Wildenbruchstr. 15, 07745
info@supracon.com, < www.supracon.com >
F01. M. Ritter, Bundesanstalt für
Materialforschung und-prüfung (BAM), Unter den Eichen 87, 12205 Berlin, info@bam.de < www.bam.de
>
G02. EU project "Transfer Standards for Calibration of SPMs”
Information may be obtained from the coordinator Dr. Jørgen Garnæs, DFM,
H01. Institute for Microelectronics
Stuttgart, Allmandring 30 a, D-70569 Stuttgart, Germany;< www.ims-chips.de >
L01. Neugebauer M, Jusko O, Neuschaefer-Rube U, Wäldele F: Darf´s
etwas kleiner sein? Quality Engineering, 9 (2004), 32. And:
Neugebauer M, Neuschaefer-Rube U: A new micro artefact for testing of optical
and tactile sensors. Proceedings of
Euspen conference 2005. michael.neugebauer@ptb.de
M01. Brand, U; Neugebauer, M; Neuschaefer-Rube, U; Wilkening, G:
Micro-Standards – State of the Art, Prospects and Limits. Proc. Sensor Conf.,
Vol. 2 (2005), 169-174. ulrich.neuschaefer-rube@ptb.de